High Temp. RF Burn-in System for Small&Medium Power Microwave Device/ModuleBTD-E560
The system can perform RF steady state life and power burn-in screening for cermet microwave
power FET with rated power below 150W and Tc controlled between 70℃~150℃
It adopts constant current priority test circuit,together with the full shielding and anti high&low
frequency oscillation design of fixture(the case is required to be grounded).Any open/short circuit,
leakage at any time & any two poles of the device shall not damage the device&equipment, or
effect other devices in test.
Point frequency signal source (VCO), amplifier, coupled detector and other microwave modules
in various bands including P / L / S / C / X / Ka / Ku.are optional
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